Demonstration of Low-Temperature Fine-Pitch Cu/SiO₂ Hybrid Bonding by Au Passivation

Fine pitch Cu/SiO2 hybrid bonding has been successfully demonstrated at a low temperature of 120∘C, breakthrough, using Au passivation method in this work. To explore the mechanism structures for details, Cu-Cu direct with on both wafer-level and chip-level discussed, including analyses AFM, SAT, TEM, electrical measurements, reliability test. fine structure stable performance can be achieved under an atmospheric environment. Accordingly, scheme excellent quality, thermal budget, high shows great feasibility 3D IC heterogenous integration applications.